| PART |
Description |
Maker |
| MM3Z10VS |
Planar Die Construction
|
TY Semiconductor Co., L...
|
| MM3Z18VS |
Planar Die Construction
|
TY Semiconductor Co., L...
|
| MM3Z47VS |
Planar Die Construction
|
TY Semiconductor Co., Ltd
|
| MMBT2222 |
Epitaxial planar die construction
|
MAKO SEMICONDUCTOR CO.,...
|
| FMBT2222A |
FMBT2222A NPN Bipolar Transistor Epitaxial planar die construction
|
First Components International
|
| DPLS160-7 |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3
Epitaxial Planar Die Construction
|
Diodes, Inc.
Diodes Incorporated
|
| DXO10701095-5 |
Planar Resonator Construction
|
SYNERGY MICROWAVE CORPO...
|
| MJD117L MJD117 |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC(Korea)
KEC[KEC(Korea Electronics)]
|
| 2SPT6341SD |
MultiEpitaxial Planar NPN Power Transistor Die
|
Solid States Devices, Inc
|
| TIP112F |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
